Mechanism for the Nanometer Scale Modification on HOPG Surface by Scanning Tunneling Microscope  

作　　者：WANG Zhonghuai DAI Changchun ZHANG Pingchen HUANG Guizhen LI Renli GUO Yi BAI Chunli 

机构地区：[1]Institute of Chemistry,Acadenua.Sinica.,Beijing 100080

出　　处：《Chinese Physics Letters》1993年第9期535-538,共4页中国物理快报（英文版）

基　　金：Supported by the Chinese Academy of Sciences.

摘　　要：A technique applying voltage across the tunnel junction for wnting permanent features on graphite with lines about 10nm wiidth using our home-built scanning tunneling microscope has been presented.Multiple-tip effects while modifying the surface are often met.The phenomciifi are explained in terms of the strong electric field existing at the junction between the tip an<7 the surface.In addition,the shape of the structure indented by the tip is in agreement with that of the tip.

关 键 词：surface. TUNNEL TUNNELING 

分 类 号：TN3[电子电信—物理电子学]