Micros true ture and Elec tron Conduction Mechanism of Hydrogenated Nano-crystalline Silicon Films  

作　　者：HE Yuliang(Y.L.HE) CHU Yining(Y.M.CHU) LIN Hongyi(H.Y.LIN) JIANG Shusheng(S.S.JIANG) 

机构地区：[1]The Almorplous Plysics Research Lnboratory,Beijing University of Acronan tics aud Astroal tics,Beijing 100083 [2]Beijing Laboratory of Elcctronic Microscopy.Academia Sinica,Beijing 100080 [3]Department of Electronic Engineering.Beijing Institute of Teclunology,Beijing 100081 [4]Laboratory of Solid State Microstrnctures,Nanjing University,Nanjing 210008

出　　处：《Chinese Physics Letters》1993年第9期539-542,共4页中国物理快报（英文版）

基　　金：Supported by the Nationdl Natural Sriance Fouddation of China;inl pout by the Lsboratory of SSM,Nanjing University.

摘　　要：The hydrogeunted nano-crystalline silicou(nc-Si:H)fims have been deposited with plasma cnl hanced chenuical vapor depositioi method.The microstrncture of tluese films las bcen studied by trausnission electrol microscopy and high resolution trans-mission electron nicroscopy.The nc-Si:H filuus slow fiber tex ture structure.The fractal dimeision of this structure lus bccn cnlculated witl it Fouricr filtered inuage.The relatiouship betwecn conductivity and temperature las also been studied and the mechnnisi of clectron conuduction is cdiscussed.

关 键 词：structure. method. CRYSTALLINE 

分 类 号：O48[理学—固体物理]