Anomalous Dielec trie Behavior in Nanome ter-Sized Amorphous Silicon Nitride  

作　　者：WANG Tao ZHANG Lide MOU Jimei 

机构地区：[1]Institute of Solid State Physics,Academia Sinic&,Hefei 230031 [2]Department of Material Science and Engineering,University of Science and Technology of Chinaf Hefei 230026

出　　处：《Chinese Physics Letters》1993年第11期676-679,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China;National Advanced Material Committee of China.

摘　　要：An anomalous dielectric behavior in nanometer-sized amocthous silicon nitride is reported. The dielectric constant of nanometer-sized ajnorph. silicon nitride has strong dependence on frequency at room temperature (RT),which is completely different from the conventional coarse-grain silicon nitride. The maximum of the dielectric constant of nanometer-sized amorphous silicon nitride at KT is about 40 times larger than that of the conventional silicon nitride. The anomalous dielectric behavior is explained by a kind of mech&nism of pola.rizationt that is, interfacial polarization.

关 键 词：GRAIN sized BEHAVIOR 

分 类 号：TG1[金属学及工艺—金属学]