Photoluminescence Studies on Very High-Density Two-Dimensonal Electron Gases in Pseudomorphic Modulation-Doped Quantum Wells  

作　　者：LI Wei WANG Zhanguo LIANG Jiben XU Bo ZHU Zhanping SONG Aimin ZHENG Wanhua YANG Bin 

机构地区：[1]Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Academia Sinica,Beijing 100083

出　　处：《Chinese Physics Letters》1994年第12期758-761,共4页中国物理快报（英文版）

摘　　要：We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Siδ-doped GaAs/ln_(0.18)Ga_(0.82) As/Al_(0.25)Ga_(0.75),As quantum wells(Ns=4.24 × 10^(12) cm^(-2)).Five well-resolved photoluminescence lines centered at 1.4194,1.4506,1.4609,1.4695 and 1.4808eV were observed,which are attributed to the subband exciton emission.The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential.These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5meV indicate the high quality of the structures.Their dependence on the excitation intensity and temperatures are also discussed.

关 键 词：quantum TRIANGLE Electron 

分 类 号：O41[理学—理论物理]