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作 者:CUI Dafu CHEN Zhenghao YUAN Zhenyu ZHOU Yueliang LÜ Huibin YANG Guozhen
机构地区:[1]Institute of Physics,Academia Sinica,Beijing 100080
出 处:《Chinese Physics Letters》1994年第12期762-765,共4页中国物理快报(英文版)
基 金:Supported by the National Natural Science Foundation of China.
摘 要:We have observed transverse electric(TE)and transverse magnetic(TM)intersubband infrared absorption peaks in GaAs/AlGaAs step multiquantum wells(SMQW).The energy splitting between TE and TM is 13meV.The high conversion efficiency of second harmonic signal due to intersubband transition in the GaAs/AlGaAs SMQW with a waveguiding surface-emitting structure have been obtained.The second harmonic generation(SffG)obeys wave vector conservation and propagates perpendicular to the waveguide surface which shows that the nonlinear polarization field for SHG may be TE as well as TM active.The existence of strong surface-emitting second harmonic signal also offers solid evidence of TE polarization active intersubband transition in GaAs/AlGaAs SMQW structure.
关 键 词:polarization WAVEGUIDE ALGAAS
分 类 号:TN2[电子电信—物理电子学]
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