Precipitation of Cu and Ni on Frank-Type Partial Dislocations in Czochralski-Grown Silicon  

作　　者：SHEN Bo ZHANG Rong SHI Yi ZHENG You-dou T.Sekiguchi K.Sumino 

机构地区：[1]Department of Physics and Institute of Solid State Physics,Nanjing University,Nanjing 21-0008 [2]Instit ute for Materials Research,Tohoku University,Sendai 980,Japan

出　　处：《Chinese Physics Letters》1996年第4期289-292,共4页中国物理快报（英文版）

摘　　要：Precipitation behaviors of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon are investigated.It is found that Cu develops precipitate colonies in the region away from Frank,partials and does not decorate Frank partials when the specimens are cooled slowly^while Ni decorates thein although the concen-tration of Ni is lower than that of Cu in the specimens.The results indicate that Ni impurity is easier to decorate Frank partials than Cu impurity in Si.

关 键 词：slowly PRECIPITATION IMPURITY 

分 类 号：TG1[金属学及工艺—金属学]