Optical Absorption of the Nanostructured SiO_(2) in Ultraviolet-Near Infrared Light Range  

作　　者：ZHANG Biao ZHANG Li-de MO Chi-mei 

机构地区：[1]Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031 [2]Department of Materials Sciences and Engineering,University of Science and Technology of China,Hefei 230026

出　　处：《Chinese Physics Letters》1996年第3期234-236,共3页中国物理快报（英文版）

摘　　要：The electronic struc ture of nanostructured SiO_(2) was studied by means of ultraviolet-near infrared,absorption spectra.A strong and broad absorption band was observed in the wavelength range of ultraviolet-near infrared light.This band is caused by the electronic transition from the valence band to the defect energy level in the bandgap which was theoretically calculated by using molecular orbital approach.With increasing the annealing temperature,the red shift of this band was observed.The mechanism of this band is discussed.

关 键 词：ULTRAVIOLET ABSORPTION INFRARED 

分 类 号：TN2[电子电信—物理电子学]