Effect of Growth Temperature on the Band Lineup of Ge/CdTe(111) Polar Interfaces  

作　　者：BAN Da-yan FANG Rong-chuan JI XUE Jian-geng LU Er-dong XU Peng-shou 班大雁;方容川;薛剑耿;陆尔东;徐彭寿(Department of Physics,University of Science and Technology of China,Hefei 230026;National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230026)

机构地区：[1]Department of Physics,University of Science and Technology of China,Hefei 230026 [2]National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230026

出　　处：《Chinese Physics Letters》1997年第8期609-612,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No.19234012.

摘　　要：By using synchrotron radiation photoelectron spectroscopy,the band lineup of Ge/CdTe(111)interfaces grown at different temperatures have been measured.Experimental studies show that the valence band offset of Ge/CdTe(111)interface grown at room temperature is 0.88±0.1 eV,which agrees well with previously reported value.While as for the interface grown at 280℃,an obvious reduction of valence band offsets is observed and attributed to sthe effect of different interface dipole.

关 键 词：value. interface VALENCE 

分 类 号：O61[理学—无机化学]