Fine Structure in the Electron Emission Process for Two DX-Like Centers in Sn-Doped AlGaAs  

作　　者：ZHAN Hua-han KANG Jun-yong HUANG Qi-sheng 詹华瀚;康俊勇;黄启圣(Department of Physics,Xiamen University,Xiamen 361005)

机构地区：[1]Department of Physics,Xiamen University,Xiamen 361005

出　　处：《Chinese Physics Letters》1998年第1期60-61,共2页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No.69576022;Natural Science Foundation of Fujian Province of China。

摘　　要：Fine structure in the electron emission process for DX(Sn)centers in AlGaAs has been studied with high resolution Laplace defect spectroscopy.The influence of the different local configuration of Al and Ga atoms around the centers on the electron thermal emissions was observed.An experimental evidence for the microscopic structure of two DX-like centers in Sn-doped AlGaAs is provided.

关 键 词：ALGAAS CENTERS DX 

分 类 号：TN2[电子电信—物理电子学]