The Rectifying Property and Photovoltaic Effect in the La_(0.8)Ag_(0.2)MnO_(3)/SrTiO_(3)-Nb Heterojunction  

作　　者：WANG Jian-Yuan ZHAI Wei JIN Ke-Xin CHEN Chang-Le 王建元;翟薇;金克新;陈长乐(Department of Applied Physics,Northwestern Polytechnical University,Xi’an 710072)

机构地区：[1]Department of Applied Physics,Northwestern Polytechnical University,Xi’an 710072

出　　处：《Chinese Physics Letters》2013年第6期182-185,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61078057 and 51172183;the National Natural Science Foundation of Shaanxi Province in China under Grant No 2012JQ8013;the Aviation Foundation of China(No 2011ZF53065);NPU Foundation for Fundamental Research(Nos JC201155 and JC20120246).

摘　　要：A p-n junction composed of Ag^(+)-doped manganite La_(0.8)Ag_(0.2)MnO_(3)(LAMO)and Nb-0.5wt%-doped SrTiO_(3)(STON)was fabricated using the pulsed laser deposition method.The heterojunction exhibits a good rectifying property over a wide temperature range from 20 to 390 K.The minimum diffusion potential and the lowest leakage currents under different negative voltages both occur at 320 K,which is around the metallic-insulator transition temperature of the LAMO film.The photovoltage rises with the decreasing temperature and wavelength of the laser beam.Under the illumination of a 473 nm laser beam,the photovoltage grows as the light power increases and seems to be saturated at about 300 mW.The maximum V_(oc) is 0.76 V,which is close to the diffusion voltage.

关 键 词：HETEROJUNCTION laser DIFFUSION 

分 类 号：TN2[电子电信—物理电子学]