Studies of the Gd Overlayer on Cr by Synchrotron Radiation Photoemission  

作　　者：ZHANG Fa-pei XU Peng-shou XU Shi-hong LU Er-dong YU Xiao-jiang ZHANG Xin-yi 张发培;徐鹏寿;徐世红;陆尔东;余小江;张新夷(National Synchrotron Radiation Laboratory,University of Science and Techology of China,Hefei 230029)

机构地区：[1]National Synchrotron Radiation Laboratory,University of Science and Techology of China,Hefei 230029

出　　处：《Chinese Physics Letters》1997年第7期553-556,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No.19574042.

摘　　要：The formation of Gd/Cr interface,the growth mechanism and electronic structure of Gd over-layers were investigated by synchrotron radiation photoemission.It is shown that Gd adatoms interact with the Cr substrate weakly.A lower deposition rate of the Gd overlayer(l.0Å/min)favors the smooth growth of Gd/Cr interface.However,higher deposition rate(6.0Å/min)leads to the cluster growth of the Gd overlayer and the presence of a“two-peak”feature of Gd 4f emission.We correlate this feature with the different coordination number of surface atoms derived from cluster-induced surface roughness.

关 键 词：CLUSTER ROUGHNESS surface 

分 类 号：TG1[金属学及工艺—金属学]