Extremely Narrow Sb Delta-Doped Epitaxial Layer Characterized by X-Ray Reflectivity  

作　　者：JIANG Zui-min XIU Li-song JIANG Xiao-ming ZHENG Wen-li LU Xue-kun ZHU Hai-jun ZHANG Xiang-jiu WANG Xun 蒋最敏;修立松;姜晓明;郑文莉;卢学坤;朱海军;张翔九;王迅(Fudan T.D.Lee Physics Laboratory,Surface Physics Laboratory,fudan University,Shanghai 200433;Synchrotron Radiation Laboratory,Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100039;Surface Physics Laboratory,Fudan University,Shanghai 200433)

机构地区：[1]Fudan T.D.Lee Physics Laboratory,Surface Physics Laboratory,fudan University,Shanghai 200433 [2]Synchrotron Radiation Laboratory,Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100039 [3]Surface Physics Laboratory,Fudan University,Shanghai 200433

出　　处：《Chinese Physics Letters》1997年第9期686-689,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No.69476008;the Key Project of the State Commission of Science and Technology of China.

摘　　要：An Sb delta doping layer in silicon is grown at the temperature of 300℃ by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam.The oscillations of the reflectivity caused by dopant Sb at Q as large as 14.5 are detected.Simulation of this curve as a whole shows that the total amount of dopant Sb is 0.15 monolayer and is restricted to two atomic layers.An extremely narrow Sb delta doping structure without Sb segregation is thus obtained at the growth temperature of 300℃ as verified by the experiment.

关 键 词：DOPANT REFLECTIVITY DOPING 

分 类 号：TN3[电子电信—物理电子学]