Photoemission of the Oxidation of Cerium Overlayers on GaSb(110) Surface  

作　　者：LIANG Qi WU Jian-xin JI Ming-rong MA Mao-sheng LIU Xian-ming ZHANG Yu-heng 梁齐;吴建新;季明荣;麻茂生;刘先明;张裕恒(Structure Research Laboratory,University of Science and Technology of China,Hefei 230026)

机构地区：[1]Structure Research Laboratory,University of Science and Technology of China,Hefei 230026

出　　处：《Chinese Physics Letters》1997年第10期793-796,共4页中国物理快报（英文版）

摘　　要：We have used x-ray photoelectron spectroscopy to study the oxidation of cerium overlayers on a semiconductor GaSb(110)surface.A GaSb(110)sample covered with 10 monolayers Ce was used to adsorb oxygen.When the exposure of O_(2) was up to 50L,the oxide of cerium,Ce_(2)O_(3),began to change into unstable CeO_(2).The dissociation of CeO_(2) resulted in strong oxidation of the substrate.The main products are Ga_(2)O_(3),Sb_(2)O_(3),and then Sb_(2)O_(5).After annealing,a part of the oxygen atoms transferred from cerium dioxide toward Ga and Sb.

关 键 词：CERIUM OXIDATION UNSTABLE 

分 类 号：TG1[金属学及工艺—金属学]