Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN  

作　　者：ZENG Chang ZHANG Shu-Ming WANG Hui LIU Jian-Ping WANG Huai-Bing LI Zeng-Cheng FENG Mei-Xin ZHAO De-Gang LIU Zong-Shun JIANG De-Sheng YANG Hui 曾畅;张书明;王辉;刘建平;王怀兵;李增成;冯美鑫;赵德刚;刘宗顺;江德生;杨辉(State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123)

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123

出　　处：《Chinese Physics Letters》2012年第1期220-223,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60506001,60976045,60836003,60776047 and 61076119;the National Basic Research Program(2007CB936700);the National Science Foundation for Distinguished Young Scholar under Grant No 60925017.

摘　　要：We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm)metal scheme,where the Pt layer is introduced as a blocking layer to suppress the diffusion of Au onto the N-face n-GaN surface.It is shown that unlike the conventional Ti/A1/Ti/Au contacts,the Ti/Pt/Au contacts exhibit an Ohmic behavior with a relatively low specific contact resistivity of 1.1×10^(-4)Ω.cm^(2) even after annealing at 350℃.X-ray diffraction(XRD)measurements by synchrotron radiation and Auger electron spectroscopy(AES)examination are performed to understand the effects of heat treatment.

关 键 词：Ohmic EMITTER RESISTIVITY 

分 类 号：TN3[电子电信—物理电子学]