Perimeter Effects on Heavy Doping GaAs Diodes  

作　　者：SHI Xiao-zhong WANG Le XIA Guan-qun 施小忠;汪乐;夏冠群(Department of Semiconductor Materials and Devices,Shanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050)

机构地区：[1]Department of Semiconductor Materials and Devices,Shanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050

出　　处：《Chinese Physics Letters》1998年第5期370-372,共3页中国物理快报（英文版）

摘　　要：The influence of perimeter effects on dark I-V characteristics of GaAs diode is investigated experimentally.The results indicate that the diodes with high energy states density will be more easily shorted than that with low energy states density during alloying.The possibility of shunt short of GaAs diode increases with the decrease of the distance between the front contact and pn junction.The AlGaAs layers enhance the dark current.

关 键 词：DIODE ALGAAS DIODES 

分 类 号：TN3[电子电信—物理电子学]