The Formation and Characterization of GaN Hexagonal Pyramids  

作　　者：ZHANG Shi-Ying XIU Xiang-Qian LIN Zeng-Qin HUA Xue-Mei XIE Zi-Li ZHANG Rong ZHENG You-Dou 张士英;修向前;林增钦;华雪梅;谢自力;张荣;郑有炓(Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093)

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》2013年第5期116-119,共4页中国物理快报（英文版）

基　　金：the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304 and 2010CB327504;the High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China under Grant Nos 60990311,60906025,60936004 and 61176063;the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011010 and BK2009255.

摘　　要：GaN with hexagonal pyramids is fabricated using the photo-assisted electroless chemical etching method.Defective areas of the GaN substrate are selectively etched in a mixed solution of KOH and K2S2O8 under ultraviolet illumination,producing submicron-sized pyramids.Hexagonal pyramids on the etched GaN with well-defined{1011}facets and very sharp tips are formed.High-resolution x-ray diffraction shows that etched GaN with pyramids has a higher crystal quality,and micro-Raman spectra reveal a tensile stress relaxation in GaN with pyramids compared with normal GaN.The cathodoluminescence intensity of GaN after etching is significantly increased by three times,which is attributed to the reduction in the internal reflection,high-quality GaN with pyramids and the Bragg effect.

关 键 词：PYRAMID ILLUMINATION ULTRAVIOLET 

分 类 号：TN3[电子电信—物理电子学]