The Valence Band Offset of an Al_(0.17)Ga_(0.83)N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy  

作　　者：WAN Xiao-Jia WANG Xiao-Liang XIAO Hong-Ling WANG Cui-Mei FENG Chun DENG Qing-Wen QU Shen-Qi ZHANG Jing-Wen HOU Xun CAI Shu-Jun FENG Zhi-Hong 万晓佳;王晓亮;肖红领;王翠梅;冯春;邓庆文;渠慎奇;张景文;侯洵;蔡树军;冯志红(Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics,Beijing 100083;School of Electronic and Information Engineering,Xi'an Jiaotong University,Xi'an 710049;National Key Lab of ASIC,Shijiazhuang 050051)

机构地区：[1]Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 [2]ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics,Beijing 100083 [3]School of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049 [4]National Key Lab of ASIC,Shijiazhuang 050051

出　　处：《Chinese Physics Letters》2013年第5期124-126,共3页中国物理快报（英文版）

基　　金：the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No YYY-0701-02;the National Natural Science Foundation of China under Grant Nos 60890193 and 61106014;the National Basic Research Program of China under Grant Nos 2010CB327503 and 2012CB619303;the High-Technology Research and Development Program of China under Grant No 2011AA050514;the National Science and Technology Major Project of China。

摘　　要：The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset(CBO)of~0.22 eV is obtained.The results indicate that the Al_(0.17)Ga_(0.83)N/GaN heterojunction exhibits a type-Ⅰ band alignment.

关 键 词：N/Ga HETEROJUNCTION SPECTROSCOPY 

分 类 号：TN3[电子电信—物理电子学]