Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO_(2) Film/p-Si Structures  

作　　者：LI An-ping ZHANG Bo-rui QIAO Yong-ping QIN Guo-gang MA Zhen-chang ZONG Wan-hua 李安平;张伯蕊;乔永平;秦国刚;马振昌;宗婉华(Department of Physics,Peking University,Beijing 100871;The 13th Institute of the Ministry of Electronic Industry,Shijiazhuang 050051)

机构地区：[1]Department of Physics,Peking University,Beijing 100871 [2]The 13th Institute of the Ministry of Electronic Industry,Shijiazhuang 050051

出　　处：《Chinese Physics Letters》1998年第4期305-306,共2页中国物理快报（英文版）

基　　金：Supported,by the National Natural Science Foundation of China under Grant No.59432022;the State Key Laboratory for Integrated Optoelectronics。

摘　　要：We have studied the effects ofγ-ray irradiation on electroluminescence(EL)from Au/extra thin Si-rich SiO_(2) film/p-Si Structures.Afterγ-ray irradiation,for the structure with a 600℃ annealed Si-rich SiO_(2) film a new blue EL band with a peak at around 480nm was observed,and for the structure with a 300℃ annealed Si-rich SiO_(2) film the red EL band shifts from 670 to 660nm and its intensity and full width at half maximum increase pronouncedly.The experimental results demonstrate that the defects induced byγ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.

关 键 词：annealed FILM STRUCTURES 

分 类 号：TG1[金属学及工艺—金属学]