Atomic Force Microscopy on the Ga_(0.16)In_(0.84)As_(0.80)Sb_(0.20)Epilayer Grown by Metalorganic Chemical Vapor Deposition  

作　　者：GAO Chun-xiao LI Shu-wei YANG Jie LIU Bing-bing 高春晓;李树伟;杨洁;刘冰冰(State Key Laboratory for Superhard Materials,Jilin University,Changchun 130023;Changchun Institute of Physics,Chinese Academy of Sciences,Changchun 130021)

机构地区：[1]State Key Laboratory for Superhard Materials,Jilin University,Changchun 130023 [2]Changchun Institute of Physics,Chinese Academy of Sciences,Changchun 130021

出　　处：《Chinese Physics Letters》1998年第10期724-726,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos.59572036 and 69576012;in part by the National Advanced Material Committee of China under Grant No.863-2-7-3-11。

摘　　要：The atomic force microscopy study was made on the quaternary Ga_(0.16)In_(0.84)As_(0.80)Sb_(0.20) epilayer prepared on GaSb substrate by metalorganic chemical vapor deposition.The island-like defects were found on the substrate surface pretreated chemically.With the growth process going,these island-like defects could be buried by the epilayer.In the initial stage,two-dimensional-growth-mode was followed.When the epilayer thickness reached 70nm,three-dimensional(3D)-growth-mode occurred and the perfect 3D islands were observed.

关 键 词：ISLAND MODE BURIED 

分 类 号：TN3[电子电信—物理电子学]