Investigation of Hole Mobility in GaInP/(In) GaAs/GaAs p-Type Modulation Doped Heterostructures  

作　　者：YANG Quan-kui LI Ai-zhen CHEN Jian-xin 杨全魁;李爱珍;陈建新(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050)

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Metallurgy,Chinese Academy of Sciences,Shanghai 200050

出　　处：《Chinese Physics Letters》1999年第1期50-52,共3页中国物理快报（英文版）

基　　金：Supported in part by the Chinese Academy of Sciences,contract number DY95608030517.

摘　　要：Ga_(0.51)In_(0.49)P/(In)GaAs/GaAs heterostructure is regarded as an excellent candidate for two dimensional hole gas system as it has a large valence band offset ratio.In this paper,we report the hole mobility in GaInP/GaAs and GaInP/In_(0.20)G_(0.80)As/GaAs p-type modulation doped heterostructures grown by gas source molecular beam epitaxy with different p-channels and doping methods.The influences of Be:GaAs cap layer,δ-doping,and strained InGaAs p-channel on hole mobility are discussed,and qualitatively explained by the ionized impurity scattering mechanism.Finally,it was shown that the improvement of hole mobility could be achieved by the δ-doping method combined with strained InGaAs channel.

关 键 词：GaAs/Ga SCATTERING MOBILITY 

分 类 号：TN3[电子电信—物理电子学]