Electroluminescence from Indium Tin Oxide Film/Nanoscale Si Oxide/p-Si Structure  

作　　者：WANG Yong-qiang ZHAO Tai-ping CUI Xiao-ming MA Zhen-chang ZONG Wan-hua QIN Guo-gang 王永强;赵太明;崔小明;马振昌;宗宛华;秦国刚(Department of Physics,Peking University,Beijing 1008712;The 13th Institute of Ministry of Electronic Industry,Shijiazhuang 050051;International Center for Material Physics,Chinese Academy of Sciences,Shenyang 110015)

机构地区：[1]Department of Physics,Peking University,Beijing 100871 [2]The 13th Institute of Ministry of Electronic Industry,Shijiazhuang 050051 [3]International Center for Material Physics,Chinese Academy of Sciences,Shenyang 110015

出　　处：《Chinese Physics Letters》1999年第8期605-607,共3页中国物理快报（英文版）

基　　金：the National Natural Science Foundation of China under Grant No.59432022;State Key Laboratory for Integrated Optoelectronics.

摘　　要：After an Si oxide layer of 3nm thickness had been grown by using magnetron sputtering on a p-type Si(100)substrate,an indium tin oxide(ITO)film was deposited onto the Si oxide layer by using electron beam deposition.Electroluminescence(EL)from such an ITO/Si oxide/p-type Si structure was measured under a forward bias of 5V or more.Its EL power efficiency is about eight times as large as that of a semitransparent Au/Si oxide(3nm)/p-Si structure.The experimental results indicate that the greater EL power efficiency is due not only to the higher optical transparency of the ITO film compared with Au film in a range of 300 to 900nm,but also to some new luminescence centers introduced in the Si oxide layer during the ITO deposition process.

关 键 词：FILM TRANSPARENCY layer 

分 类 号：TN3[电子电信—物理电子学]