A New Method to Calculate the Rashba Spin Splitting in Ⅲ-Nitride Heterostructures  

作　　者：LI Ming SUN Gang FAN Li-Bo 李明;孙刚;范丽波(College of Electrical and Information Engineering,Xuchang University,Xuchang 461000)

机构地区：[1]College of Electrical and Information Engineering,Xuchang University,Xuchang 461000

出　　处：《Chinese Physics Letters》2012年第12期172-176,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11004168;the Program for Science&Tech-nology Innovation Talents in Universities of Henan Province(2012HASTIT033)。

摘　　要：By constructing proper basis functions,the Kane Hamiltonian is transformed to two separate Hamiltonians,and the Schr?dinger equation for conduction-band envelope functions can be obtained by eliminating the valence band components of the envelope functions.Then we decouple the up-spin and down-spin states and derive the expression for the Rashba coefficient and single-particle energy,considering the spin-orbit coupling and the nonparabolicity corrections.Finally,we calculate the Rashba spin splitting for Al_(x)Ga_(1-x)N/GaN heterostructures by using the variational method.The Rashba spin splitting calculated here is of the same order of magnitude as in other Ⅲ-Ⅴ materials,showing that the internal electric field caused by the high concentration of the 2DEG is crucial for considerable Rashba spin splitting.

关 键 词：RASHBA HAMILTONIAN ENVELOPE 

分 类 号：O17[理学—数学]