Germanium Nitride as a Buffer Layer for Phase Change Memory  

作　　者：ZHANG Xu LIU Bo PENG Cheng RAO Feng ZHOU Xi-Lin SONG San-Nian WANG Liang-Yong CHENG Yan WU Liang-Cai YAO Dong-Ning SONG Zhi-Tang FENG Song-Lin 张徐;刘波;彭程;饶峰;周夕淋;宋三年;王良咏;成岩;吴良才;姚栋宁;宋志棠;封松林(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences,Shanghai 200050)

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences,Shanghai 200050

出　　处：《Chinese Physics Letters》2012年第10期171-173,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China(2010CB934300,2011CBA00607,2011CB932800);the National Integrate Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906004,60906003,61006087,61076121);the Science and Technology Council of Shanghai(1052nm07000).

摘　　要：The results of adhesion improvement and SET-RESET operation voltage reduction for the GeN buffer layer are presented.It is found that the adhesive strength between the Ge_(2)Sb_(2)Te_(5)(GST)layer and the layer below could be increased at least 20 times,which is beneficial for solving the phase change material peeling issue in the fabrication process of phase change memory(PCM).Meanwhile,the RESET voltage of the PCM cell with a 3-nm-thick GeN buffer layer can be reduced from 3.5 V to 2.2 V.The GeN buffer layer will play an important role in high density and low power consumption PCM applications.

关 键 词：STRENGTH LAYER THICK 

分 类 号：TG1[金属学及工艺—金属学]