Electronic Structures of InGaN_(2) Nanotubes  

作　　者：YANG Mao SHI Jun-Jie MEI Wei-Ning WANG Lu ZHANG Min 杨茂;史俊杰;梅维宁;王路;张敏(State Key Laboratory for Mesoscopic Physics,and Department of Physics,Peking University,Beijing 100871;Department of Physics,University of Nebraska at Omaha,Omaha,Nebraska 68182-0266,USA;College of Physics and Electron Information,Inner Mongolia Normal University,Hohhot 010022)

机构地区：[1]State Key Laboratory for Mesoscopic Physics,and Department of Physics,Peking University,Beijing 100871 [2]Department of Physics,University of Nebraska at Omaha,Omaha,Nebraska 68182-0266,USA [3]College of Physics and Electron Information,Inner Mongolia Normal University,Hohhot 010022

出　　处：《Chinese Physics Letters》2012年第10期178-181,共4页中国物理快报（英文版）

基　　金：Supported jointly by the National Basic Research Program of China(No 2012CB619304);the National Natural Science Foun-dation of China(51072007,91021017,11047018);the Beijing Natural Science Foundation(1092007,1112007);the Natural Science Foundation of Inner Mongolia Autonomous Region of China(2010BS0101);the“Short Term Oversea Study Program for Ph.D.Candidates” Funded by the Graduate School of Peking University.

摘　　要：We investigate the electronic structures of InGaN_(2) nanotubes(NTs)using first-principles calculations.It is found that all four types of InGaN_(2) NTs,with the same diameter,have similar stability.The total energy of the per unit InGaN_(2) NT depends on its diameter due to the curvature effect.The zigzag(armchair)InGaN_(2) NTs have direct(indirect)band gaps.The band gap increases for all of the InGaN_(2) NTs when their diameters increase.The valence band maximum(VBM)states of the InGaN_(2) NTs are p-like states localised around N atoms.The p-like VBM states in zigzag(armchair)InGaN_(2) NTs are perpendicular(parallel)to the tube axis.

关 键 词：STABILITY EFFECT ZIGZAG 

分 类 号：TB3[一般工业技术—材料科学与工程]