Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering  

作　　者：WANG Hui ZHANG Bao-Lin WU Guo-Guang WU Chao SHI Zhi-Feng ZHAO Yang WANG Jin MA Yan DU Guo-Tong DONG Xin 王辉;张宝林;吴国光;武超;史志锋;赵洋;王瑾;马艳;杜国同;董鑫(State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012;College of Physics and Engineering,Henan University of Science and Technology,Luoyang 471003)

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012 [2]College of Physics and Engineering,Henan University of Science and Technology,Luoyang 471003

出　　处：《Chinese Physics Letters》2012年第10期190-192,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China(2011CB302005);the National Natural Science Foundation of China(61006006,60877020,60976010);the Science and Technology Development Project in Jilin Province(20100170);the Fundamental Research Funds for the Central Universities(dut11rc(3)45).

摘　　要：The p-NiO thin film is prepared by radio frequency magnetron sputtering on the n-GaN/sapphire substrate to form p-NiO/n-GaN heterojunction diodes.The structural,optical and electrical properties of the p-NiO thin film are investigated.The results indicate that the NiO film has good crystal qualities and stable p-type conductivities.The current-voltage measurement of the p-NiO/n-GaN diode exhibits typical rectifying behaviour with a turn-on voltage of about 2.2 V.Under forward bias,a prominent ultraviolet emission centered at 375 nm is observed at room temperature.Furthermore,the mechanism of the light emission is discussed in terms of the band diagrams of the heterojunction in detail.

关 键 词：temperature HETEROJUNCTION SAPPHIRE 

分 类 号：TN3[电子电信—物理电子学]