In-Plane Optical Anisotropy of a-Plane GaN Film on r-Plane Sapphire Grown by Metal Organic Chemical vapour Deposition  

作　　者：DING Yu LIU Bin TAO Tao LI Yi ZHANG Zhao ZHANG Rong XIE Zi-Li ZHAO Hong GU Shu-Lin LV Peng ZHU Shi-Ning ZHENG You-Dou 丁煜;刘斌;陶涛;李弋;张曌;张荣;谢自力;赵红;顾书林;吕鹏;祝世宁;郑有炓(Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093;School of Physics,National Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093)

机构地区：[1]Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093 [2]School of Physics,National Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》2012年第10期217-220,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB301900,2012CB619304;the National High-Technology Research and Development Program of China under Grant No 2011AA03A103;the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004,61176063);the Natural Science Foundation of Jiangsu Province(BK2008019,BK2011010,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics.

摘　　要：The in-plane optical anisotropic properties of the non-polar a-plane GaN films grown by metal organic chemical vapour deposition are investigated by using polarised photoluminescence(PL),optical transmission and Raman scattering measurements.Through polarised PL and transmission spectra,the in-plane optical anisotropic properties of a-plane GaN film are found,which are attributed to the topmost valance band(atΓpoint)split into three sub-bands under anisotropic strain.The PL spectra also exhibit that the light hole band moves up more rapidly than the spin-orbit crystal-field spilt-off hole band with the increasing in-plane anisotropic compressive strain.Raman scattering spectra under different configurations further indicate the in-plane anisotropy and the hexagonal crystalline structure of these a-plane GaN films.

关 键 词：SCATTERING VAPOUR ANISOTROPIC 

分 类 号：TN3[电子电信—物理电子学]