Stable Organic Field Effect Transistors with Low-Cost MoO_(3)/Al Source-Drain Electrodes  

作　　者：ZHANG Hui MI Bao-Xiu LI Xin GAO Zhi-Qiang ZHAO Lu HUANG Wei 张辉;密保秀;李欣;高志强;赵璐;黄维(Jiangsu Engineering Centre for Flat-Panel Displays and Solid-state Lighting and College of Materials Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210046;Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials,Nanjing University of Posts and Telecommunications,Nanjing 210046)

机构地区：[1]Jiangsu Engineering Centre for Flat-Panel Displays and Solid-state Lighting and College of Materials Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210046 [2]Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials,Nanjing University of Posts and Telecommunications,Nanjing 210046

出　　处：《Chinese Physics Letters》2013年第2期235-238,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Nos 20974046,61077021,61076016);New Century Excellent Talents Funding from Ministry of Education in China(NCET-08-0697);the National Basic Research Program of China(No 2009CB930600).

摘　　要：Stable organic field effect transistors(OFETs)based on copper phthalocyanine(CuPc)are reported using MoO_(3)/Al as source-drain top contacts.By annealing the fabricated device at 130℃ in air,the mobility and the stability of the OFETs can be significantly improved in comparison with the untreated device.The heat-treated devices without encapsulation show a device storage stability of nearly 400 h while the untreated one only 183 h.This improvement is suggested to be mainly attributed to the reduction of the contact barrier between CuPc and the electrode,as well as the better alignment of CuPc molecules via post annealing.

关 键 词：DRAIN stability ALIGNMENT 

分 类 号：TN3[电子电信—物理电子学]