Growth and Characterization of an a-Plane In_(x)Ga_(1−x)N on a r-Plane Sapphire  

作　　者：ZHAO Gui-Juan LI Zhi-Wei WEI Hong-Yuan LIU Gui-Peng LIU Xiang-Lin YANG Shao-Yan ZHU Qin-Sheng WANG Zhan-Guo 赵桂娟;李志伟;魏鸿源;刘贵鹏;刘祥林;杨少延;朱勤生;王占国(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083)

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083

出　　处：《Chinese Physics Letters》2012年第11期178-182,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60976008,61006004,61076001,10979507;the Special Funds for Major State Basic Research Project(973 program)of China(No A000091109-05);the National High-Technology R&D Program of China(No 2011AA03A101).

摘　　要：The non-polar a-plane(1120)In_(x)Ga_(1−x)N alloys with different indium compositions(0.074≤x≤0.555)were grown on r-plane(1012)sapphire substrates by metalorganic chemical vapor deposition,and the indium compositions x are estimated from x-ray diffraction measurements.The in-plane orientation of the In_(x)Ga_(1−x)N with respect to the r-plane substrate is confirmed to be[1100]sapphire||[1120]In_(x)Ga_(1−x)N and[1101]sapphire||[0001]In_(x)Ga_(1−x)N.The effects of substrate temperature,reactor pressure and trimethylindium input flow on the indium incorporation and growth rate are investigated.The morphology of the a-plane In_(x)Ga_(1−x)N is found to be significantly improved with the decreasing indium composition x and growth rate.Moreover,the in-plane anisotropic structural characteristics are revealed by high resolution x-ray diffraction employing azimuthal dependence,and the degree of anisotropy decreases with the increase of indium composition.

关 键 词：ALLOYS PLANE 

分 类 号：TG1[金属学及工艺—金属学]