High Sensitivity Magnetic Field Sensors Based on Nano-Polysilicon Thin-Film Transistors  

作　　者：ZHAO Xiao-Feng WEN Dian-Zhong ZHUANG Cui-Cui LIU Gang WANG Zhi-Qiang 赵晓锋;温殿忠;庄萃萃;刘刚;王志强(Key Laboratory of Electronics Engineering,College of Heilongjiang Province,Heilongjiang University,Harbin 150080)

机构地区：[1]Key Laboratory of Electronics Engineering,College of Heilongjiang Province,Heilongjiang University,Harbin 150080

出　　处：《Chinese Physics Letters》2012年第11期215-218,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China No 61006057;the Foundation for University Young Key Teacher of Heilongjiang Province under Grant No 1251G046;the Excellent Youth Foundation of Heilongjiang University under Grant No JCL201007.

摘　　要：A high-sensitivity magnetic field sensor based on the nano-polysilicon thin film transistors is proposed to adopt the nano-polysilicon thin films and the nano-polysilicon/single silicon heterojunction interfaces as the sensing layers.By using CMOS technology,the fabrication of the nano-polysilicon thin film transistors with Hall probes can be achieved on the<100>high resistivity single silicon substrates,in which the thicknesses of the nano-polysilicon thin films are 120 nm and the length width ratio of the channel is 320μm/80μm.When V_(DS)=5.0 V,the magnetic sensitivity and linearity is 264 mV/T and 0.23%f.s.(full scale),respectively.The experimental results show that the magnetic sensors based on nano-polysilicon thin film transistors with Hall probes exhibit high sensitivity.

关 键 词：HETEROJUNCTION FILM RESISTIVITY 

分 类 号：TN3[电子电信—物理电子学]