Photoconductivity Decay Under Illumination of a Pulsed Laser with Unfocused or Focused Beam  

作　　者：WU Zong-sen SUN Xiao-tian ZHENG You-dou CHEN Zhi-zhong SHEN Bo 吴宗森;孙晓天;郑有炓;陈志忠;沈波(State Key Laboratory of Modern Acoustics and Institute of Acoustics,Nanjing University,Nanjing 210093;Department of Physics,Nanjing University,Nanjing 210093)

机构地区：[1]State Key Laboratory of Modern Acoustics and Institute of Acoustics,Nanjing University,Nanjing 210093 [2]Department of Physics,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》1998年第6期447-449,共3页中国物理快报（英文版）

基　　金：Supported in part by the National Natural Science Foundation of China under Grant No.19634050。

摘　　要：Photoconductivity decay(PCD)in semiconductors is investigated by a pulsed laser with an unfocused or a focused beam.The rigorous solutions of PCD under illumination with two different types of laser beams,unfocused and focused,are derived separately.The experimental results of PCD are compared with the theory using Ge-based GaN under illumination of a pulsed Nd:YAG laser at 355nm.The experimental and numerical results are in good agreement.

关 键 词：ND:YAG FOCUS laser 

分 类 号：TN2[电子电信—物理电子学]