高温与电子束辐照共同作用下SiO_(x)材料的结构演化研究  

The research on the structural evolution of SiO_(x) under the combined effect of high temperature and electron beam irradiation

作　　者：梁芮 陈国新[2] 黄钦 王楠 唐发俊 张志佳 卢焕明[2] 康建立[5] LIANG Rui;CHEN Guo-xin;HUANG Qin;WANG Nan;TANG Fa-jun;ZHANG Zhi-jia;LU Huan-ming;KANG Jian-li(School of Materials Science and Engineering,TianGong University,Tianjin 300387;Ningbo Institute of Material Technology and Engineering,Ningbo Zhejiang 315201;Institute of Semiconductors,Guangdong Academy of Sciences,Guangzhou Guangdong 510650;The 46th Research Institute of China Electronics Technology Group Corporation,Tianjin 300387;School of Materials Science and Engineering,Tianjin University,Tianjin 300072,China)

机构地区：[1]天津工业大学材料科学与工程学院,天津300387 [2]中国科学院宁波材料技术与工程研究所,浙江宁波315201 [3]广东省科学院半导体研究所,广东广州510650 [4]中国电子科技集团公司第四十六研究所,天津300220 [5]天津大学材料科学与工程学院,天津300072

出　　处：《电子显微学报》2021年第4期367-372,共6页Journal of Chinese Electron Microscopy Society

基　　金：中国科学院青年创新促进会人才项目(No.2019295);广东省科学院建设国内一流机构行动专项资金项目(No.2020GDASYL-202001031200);天津市科技计划项目(No.18ZXJMTG00300);天津市自然科学基金项目(No.18JCYBJC41800).

摘　　要：本文利用透射电子显微镜原位加热技术研究了高温下SiO_(x)材料的结构演化行为,并通过EELS谱分析了SiO_(x)材料结构的化学组成变化。研究结果表明:在高温作用下,电子束辐照对SiO_(x)材料的相分离过程起到了促进作用;高密度电子束辐照是SiO_(x)材料中产生孔状结构的主要原因;SiO_(x)材料在高温和电子束辐照作用下,会快速形成纳米硅镶嵌在多孔二氧化硅薄膜中的特殊结构。In this paper,the structural evolution of SiO_(x)at the high temperature was studied by in-situ heating with transmission electron microscopy(TEM),and the chemical composition of SiO_(x)was analyzed by electron energy loss spectrum(EELS).The results show that electron beam irradiation promotes the phase separation process of SiO_(x)and the high density electron beam irradiation is the main reason for the formation of porous structure in SiO_(x)at high temperature.Under the combined effect of high temperature and electron beam irradiation,SiO_(x)rapidly form a special structure of nano-crystalline silicon embedded in porous silica.

关 键 词：SiO_(x)材料 电子束辐照 原位TEM加热 

分 类 号：O484.5[理学—固体物理] O792[理学—物理]