High Quality Pseudomorphic In_(0.24)GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-Absorption Modulators  

作　　者：YANG Xiao-Hong LIU Shao-Qing NI Hai-Qiao LI Mi-Feng LI Liang HAN Qin NIU Zhi-Chuan 杨晓红;刘少卿;倪海桥;李密峰;李亮;韩勤;牛智川(State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;State Key laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 [2]State Key laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083

出　　处：《Chinese Physics Letters》2013年第4期133-135,共3页中国物理快报（英文版）

基　　金：the National Natural Science Foundation of China under Grant Nos 61274069,61176053 and 61021003;the National High-Technology Research and Development Program of China under Grant No 2012AA012202;the National Basic Research Program of China under Grant Nos 2012CB933503 and 2013CB932904.

摘　　要：The good quality of 200 pairs of highly strained In_(0.24)GaAs/GaAs multi-quantum-well(MQW)structure is demonstrated by the x-ray diffraction and photoluminescence curves.Large-area modulators based on the pseudomorphic In_(0.24)GaAs/GaAs MQW are designed and fabricated successfully,where the diameters are not less than 3 mm and the working wavelength is extended to 1064 nm.The single pass modulation depth is demonstrated to be 0.34 at 1064 nm at a reverse voltage of 80 V.

关 键 词：GaAs/Ga Quantum STRAINED 

分 类 号：TN3[电子电信—物理电子学]