改善SiC MOSFET开关特性的有源驱动电路研究  

Research on Active Gate Driver for Improving SiC MOSFET Switching Characteristics

作　　者：卢乙 李先允[1] 王书征[1] 何鸿天 周子涵 LU Yi;LI Xianyun;WANG Shuzheng;HE Hongtian;ZHOU Zihan(School of Electric Power Engineering,Nanjing Institute of Technology,Nanjing 211167,Jiangsu,China)

机构地区：[1]南京工程学院电力工程学院,江苏南京211167

出　　处：《电气传动》2021年第16期21-26,共6页Electric Drive

基　　金：江苏省重点研发计划项目(BE2018130);江苏省普通高校研究生科研创新计划项目(SJCX19_0530);江苏省普通高校研究生科研创新计划项目(SJCX19_0532)。

摘　　要：针对碳化硅金属氧化物半导体场效应管(SiCMOSFET)开关过程中存在的电流、电压过冲和振荡问题,首先对SiCMOSFET的开关过程进行详细分析,得出电流、电压过冲和震荡的产生机理,然后根据影响过冲和振荡的关键因素,分别提出了电流注入型、变电压型和变电阻型有源驱动电路,并通过LTspice仿真软件验证了所提有源驱动电路的有效性,最后搭建实验平台对所提变电压型有源驱动电路进行实验验证。实验结果表明,所提变电压型有源驱动电路能够在牺牲较小开关损耗的条件下,有效抑制SiCMOSFET开关过程中的电流、电压过冲和振荡。Aiming on the problems of current and voltage overshoot and oscillation during the silicon carbide metal oxide semiconductor field effect transistor(SiC MOSFET)switching process,the generation mechanism of current and voltage overshoot and oscillation was obtained firstly based on the analysis of the SiC MOSFET switching process. Then,the current-injected,variable-voltage and variable-resistance active gate drivers were proposed according to the key factors affecting the overshoot and oscillation,and the effectiveness of the proposed active gate drivers was verified by LTspice simulation software. Finally,an experimental platform was set up for experimental verification of the proposed variable-voltage active gate driver. The experimental results show that the proposed variable-voltage active gate driver can effectively suppress the current and voltage overshoot and oscillation during the SiC MOSFET switching process at the expense of small switching losses.

关 键 词：碳化硅金属氧化物半导体场效应管(SiCMOSFET) 有源驱动电路 LTspice仿真软件 过冲 振荡 

分 类 号：TM13[电气工程—电工理论与新技术]