Annealing effects on the optical and electrochemical properties of tantalum pentoxide films  

作　　者：Wei REN Guang-Dao YANG Ai-Ling FENG Rui-Xia MIAO Jun-Bo XIA Yong-Gang WANG 

机构地区：[1]School of Science&School of Electronic Engineering,Xi’an University of Posts&Telecommunications,Xi’an 710121,China [2]School of Physics and Information Technology,Shaanxi Normal University,Xi’an 710119,China [3]Institute of Physics&Optoelectronics Technology,Baoji University of Arts and Sciences,Baoji 721016,China

出　　处：《Journal of Advanced Ceramics》2021年第4期704-713,共10页先进陶瓷（英文）

基　　金：supported by the Joint Research Funds of Department of Science&Technology of Shaanxi Province and Northwestern Polytechnical University(Grant No.2020GXLH-Z-029).

摘　　要：Tantalum pentoxide(Ta_(2)O_(5)) has attracted intensive attention due to their excellent physicochemical properties.Ta_(2)O_(5) films were synthesized via electron beam evaporation(EBE)and subsequently annealed at different temperatures ranging from 300 to 900℃.X-ray diffraction(XRD)results show that amorphous Ta_(2)O_(5) thin films form from 300 to 700℃ and then a phase transition to polycrystalline β-Ta_(2)O_(5) films occurs since 900℃.The surface morphology of the Ta_(2)O_(5) films is uniform and smooth.The resulted Ta_(2)O_(5)films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm.The bandgap of the Ta_(2)O_(5) films is broadened from 4.32 to 4.46 eV by annealing.The 900℃ polycrystalline film electrode has improved electrochemical stability,compared to the other amorphous counterparts.

关 键 词：Ta_(2)O_(5)films ANNEAL optical property electrochemical stability 

分 类 号：TQ135.13[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]