Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS_(2) field-effect transistor  

作　　者：Jae Young Park SangHyuk Yoo Byeongho Park Taekyeong Kim Young Tea Chun Jong Min Kim Keonwook Kang Soo Hyun Lee Seong Chan Jun 

机构地区：[1]Department of Mechanical Engineering,Yonsei University,Seoul 03722,Republic of Korea [2]Center for Biomicrosystem,Brain Science Institute,Korea Institute of Science and Technology,Seoul 02792,Republic of Korea [3]Sensor System Research Center,Korea Institute of Science and Technology,Seoul 02792,Republic of Korea [4]Department of Physics,Hankuk University of Foreign Studies,Yongin 17035,Republic of Korea [5]Division of Electronics and Electrical Information Engineering,Korea Maritime and Ocean University,Busan 49112,Republic of Korea [6]Electrical Engineering Division Engineering Department,University of Cambridge,Cambridge,CB3 OFA,UK

出　　处：《Nano Research》2021年第7期2207-2214,共8页纳米研究（英文版）

基　　金：This work was supported by the national research foundation of Korea(NRF)grant funded by the Korea government(MIST)(Nos.NRF-2019R1A2C2090443,NRF-2017M3A7B4041987,NRF-2020M3F6A1081009,and NRF-2017M1A3A3A02015033);Korea Electric Power Corporation.(Grant No.R19XO01-23).

摘　　要：We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide(TFSI)-treated O-ReS_(2) field-effect transistors.Pristine ReS_(2) was compared with defect-mediated ReS_(2) to confirm whether the presence of defects on the interface enhances the interaction between O-ReS_(2) and TFSI molecules.Prior to the experiment,density functional theory(DFT)calculation was performed,and the result indicated that the charge transfer between TFSI and O-ReS_(2) is more sensitive to external electric fields than that between TFSI and pristine ReS_(2).After TFSI treatment,the drain current of O-ReS_(2) FET was significantly increased up to 1,113.4 times except in the range of−0.32–0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules,contrary to a significant degradation in device performance in pristine ReS_(2) FET.Moreover,in the treated O-ReS_(2) device,the dipole direction was highly influenced by the voltage sweep direction,generating a significant area of hysteresis in I–V and transfer characteristics,which was further verified by the surface potential result.Furthermore,the dipole state was enhanced according to the wavelength of the light source and photocurrent.These results indicate that TFSI-treated ReS_(2) FET has large potential for use as next-generation memristor,memory,and photodetector.

关 键 词：Two-dimensional material ReS_(2) field-effect transistor TFSI SUPERACID DIPOLE 

分 类 号：TN32[电子电信—物理电子学]