铝掺杂量对于铝锌氧薄膜晶体管的电学性能的影响  

The influence of aluminum doping amount on the electrical performance of aluminum-zinc-oxide thin-film transistors

作　　者：王冶 王超[1,2] 杨帆[1,2] WANG Ye;WANG Chao;YANG Fan(School of electrical and computer engineering,Jilin Jianzhu university,Changchun 130118,China;Key laboratory of building electric comprehensive energy saving,Jilin province,Changchun 130118,China)

机构地区：[1]吉林建筑大学电气与计算机学院,长春130118 [2]吉林省建筑电气综合节能重点实验室,长春130118

出　　处：《吉林建筑大学学报》2021年第2期83-88,共6页Journal of Jilin Jianzhu University

基　　金：中央引导地方科技发展研究项目(202002012JC);吉林省科技发展计划项目(20200201177JC).

摘　　要：本文利用磁控溅射法在硅片上制备了不同铝掺杂量的铝锌氧薄膜晶体管,并研究了铝掺杂量对铝锌氧薄膜晶体管电学性能的影响,可以看出不同铝掺杂量对于薄膜晶体管电学性能存在影响,当Al掺杂功率为15 W时,薄膜晶体管开关比达到5.7×10^(5),亚阈值摆幅为3 V·dec^(-1),阈值电压3 V,迁移率1.6 cm^(2).(V·s)^(-1).This article uses magnetron sputtering to prepare aluminum-zinc oxide thin-film transistors with different amounts of aluminum substitution on silicon wafers,to study the effect of aluminum substitution on the electrical properties of aluminum-zinc oxide thin-film transistors.Different amounts of aluminum substitution can be cut for thin-film transistors.The electrical performance is affected.When the Al substitution power is 15 W,the thin film transistor switching ratio reaches 5.7×10^(5),the subthreshold swing is 3 V·dec^(-1),the threshold voltage is 3 V,and the mobility is 1.6 cm^(2)·(V·s)^(-1).

关 键 词：薄膜晶体管(TFT) 铝掺杂量 铝锌氧(AZO) 电学性能 

分 类 号：TB383[一般工业技术—材料科学与工程]