不同应力下碳化硅场效应晶体管器件总剂量效应及退火特性  

Total dose effect and annealing characteristics of silicon carbide field effect transistor devices under different stresses

作　　者：顾朝桥 郭红霞[2] 潘霄宇 雷志峰 张凤祁[2] 张鸿 琚安安 柳奕天 Gu Zhao-Qiao;Guo Hong-Xia;Pan Xiao-Yu;Lei Zhi-Feng;Zhang Feng-Qi;Zhang Hong;Ju An-An;Liu Yi-Tian(School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China;State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component,CEPREI,Guangzhou 510610,China)

机构地区：[1]湘潭大学材料科学与工程学院,湘潭411105 [2]西北核技术研究所,西安710024 [3]工业和信息化部第五研究所,电子元器件可靠性物理及其应用技术国家重点实验室,广州510610

出　　处：《物理学报》2021年第16期198-206,共9页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11875229)资助的课题。

摘　　要：以碳化硅场效应晶体管器件作为研究对象,对其开展了不同电压、不同温度下的钴源辐照实验以及辐照后的退火实验.使用半导体参数分析仪测试了器件的直流参数,研究了器件辐照敏感参数在辐照和退火过程中的变化规律,分析了电压、温度对器件辐照退化产生影响的原因,也探索了退火恢复的机理.结果表明:辐照感生的氧化物陷阱电荷是造成碳化硅场效应晶体管器件电学参数退化的主要原因,电压和温度条件会影响氧化物陷阱电荷的最终产额,从而导致器件在不同电压、不同温度下辐照后的退化程度存在差异;退火过程中由于氧化物陷阱电荷发生了隧穿退火,导致器件电学性能得到了部分恢复.In this paper,silicon carbide field effect transistor device is taken as a research object,and the cobalt source irradiation experiment is conducted under different voltages and different temperatures and the annealing experiment is also performed after irradiation.The semiconductor parameter analyzer is used to test the direct current(DC)parameters of the device,and the changes in the radiation sensitive parameters of the device in the irradiation and annealing process are studied.The reasons for the influence of voltage and temperature on the radiation degradation of the device are analyzed,and the annealing recovery is also explored.The results show that the oxide trapped charge induced by irradiation is the main reason for the degradation of the electrical parameters of the silicon carbide field effect transistor device.The voltage and temperature can affect the final yield of the oxide trapped charge,which causes the device to produce the difference in the degree of degradation after irradiation at different voltages and different temperatures;in the annealing process,due to the annealing of the tunneling of oxide trapped charges,the electrical performance of the device can be restored partially.

关 键 词：碳化硅场效应晶体管 总剂量 电压 温度 退火效应 

分 类 号：TN386[电子电信—物理电子学]