Anisotropic photoresponse of layered rhenium disulfide synaptic transistors  

作　　者：Chunhua An Zhihao Xu Jing Zhang Enxiu Wu Xinli Ma Yidi Pang Xiao Fu Xiaodong Hu Dong Sun Jinshui Miao Jing Liu 安春华;徐志昊;张璟;武恩秀;马新莉;庞奕荻;付晓;胡晓东;孙栋;苗金水;刘晶(State Key Laboratory of Precision Measurement Technology and Instruments,School of Precision Instruments and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China;State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;International Center for Quantum Materials,School of Physics,Peking University,Beijing 100871,China)

机构地区：[1]State Key Laboratory of Precision Measurement Technology and Instruments,School of Precision Instruments and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China [2]State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China [3]International Center for Quantum Materials,School of Physics,Peking University,Beijing 100871,China

出　　处：《Chinese Physics B》2021年第8期49-54,共6页中国物理B（英文版）

摘　　要：Layered ReS_(2) with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices.However,systematic characterizations of the angle-dependent photoresponse of ReS_(2) are still very limited.Here,we studied the anisotropic photoresponse of layered ReS_(2) phototransistors in depth.Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies,which are along 120°and 90°,respectively.We further measured the angle-resolved photoresponse of a ReS_(2) transistor with 6 diagonally paired electrodes.The maximum photoresponsivity exceeds 0.515 A·W^(-1) along b-axis,which is around 3.8 times larger than that along the direction perpendicular to b axis,which is consistent with the optical anisotropic directions.The incident wavelength-and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS_(2) interaction,which explains the anisotropic photoresponse.We also observed angle-dependent photoresistive switching behavior of the ReS_(2) transistor,which leads to the formation of angle-resolved phototransistor memory.It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light.This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks(ANN)in a wide spectral range of sensitivity provided by polarized light.

关 键 词：ReS2 in-plane anisotropy anisotropic photoresponse PHOTOTRANSISTOR 

分 类 号：TN32[电子电信—物理电子学]