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作 者:Nan Zhang Bin Cheng Hui Li Lin Li Chang-Gan Zeng 张南;程斌;李惠;李林;曾长淦(International Center for Quantum Design of Functional Materials,Hefei National Laboratory for Physical Sciences at the Microscale,and Synergetic Innovation Center of Quantum Information&Quantum Physics,University of Science and Technology of China,Hefei 230026,China;CAS Key Laboratory of Strongly Coupled Quantum Matter Physics,Department of Physics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education,Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China)
机构地区:[1]International Center for Quantum Design of Functional Materials,Hefei National Laboratory for Physical Sciences at the Microscale,and Synergetic Innovation Center of Quantum Infoimation&Quantum Physics,University of Science and Technology of China,Hefei 230026,China [2]CAS Key Laboratory of Strongly Coupled Quantum Matter Physics,Department of Physics,University of Science and Technology of China,Hefei 230026,China [3]Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education,Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China
出 处:《Chinese Physics B》2021年第8期158-162,共5页中国物理B(英文版)
基 金:Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDC07010000);the National Natural Science Foundation of China(Grant Nos.11974324,U1832151,11804326,and 11904001);the National Key Research and Development Program of China(Grant No.2017YFA0403600);the Anhui Initiative Fund in Quantum Information Technologies(Grant No.AHY170000);the Fund from the Hefei Science Center,Chinese Academy of Sciences(Grant No.2020HSC-UE014).
摘 要:As an elemental semiconductor,tellurium has recently attracted intense interest due to its non-trivial band topology,and the resulted intriguing topological transport phenomena.In this study we report systematic electronic transport studies on tellurium flakes grown via a simple vapor deposition process.The sample is self-hole-doped,and exhibits typical weak localization behavior at low temperatures.Substantial negative longitudinal magnetoresistance under parallel magnetic field is observed over a wide temperature region,which is considered to share the same origin with that in tellurium bulk crystals,i.e.,the Weyl points near the top of valence band.However,with lowering temperature the longitudinal magnetoconductivity experiences a transition from parabolic to linear field dependency,differing distinctly from the bulk counterparts.Further analysis reveals that such a modulation of Weyl behaviors in this low-dimensional tellurium structure can be attributed to the enhanced inter-valley scattering at low temperatures.Our results further extend Weyl physics into a low-dimensional semiconductor system,which may find its potential application in designing topological semiconductor devices.
关 键 词:Weyl physics tellurium flakes negative longitudinal magnetoresistance
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