Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure  

作　　者：Ruo-Han Li Wu-Xiong Fei Rui Tang Zhao-Xi Wu Chao Duan Tao Zhang Dan Zhu Wei-Hang Zhang Sheng-Lei Zhao Jin-Cheng Zhang Yue Hao 李若晗;费武雄;唐锐;吴照玺;段超;张涛;朱丹;张苇杭;赵胜雷;张进成;郝跃(Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou 510610,China;China Aerospace Components Engineering Center,Beijing 100094,China)

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China [2]China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou 510610,China [3]China Aerospace Components Engineering Center,Beijing 100094,China

出　　处：《Chinese Physics B》2021年第8期480-484,共5页中国物理B（英文版）

基　　金：Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2020B010174001 and 2020B010171002);the Ningbo Science and Technology Innovation Program 2025(Grant No.2019B10123);the National Natural Science Foundation of China(Grant No.62074122).

摘　　要：The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier heightΦ_(1,p),polarization charge density σ_(b),and equivalent unite capacitance C_(oc).It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_(th),and threshold voltage|V_(th)|increases with the reduction in p-GaN doping concentration and the work-function of gate metal.Meanwhile,the increase in gate dielectric relative permittivity may cause the increase in threshold voltage|V_(th)|.Additionally,the parameter influencing output current most is the p-GaN doping concentration,and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10^(16) cm^(-3) at VGS=-12 V and VDS=-10 V.

关 键 词：p-channel GaN MOSFETs enhancement mode(E-mode) threshold voltage 

分 类 号：TN386[电子电信—物理电子学]