Bufferless Epitaxial Growth of GaAs on Step-Free Ge(001)Mesa  

作　　者：Ding-Ming Huang Jie-Yin Zhang Jian-Huan Wang Wen-Qi Wei Zi-Hao Wang Ting Wang Jian-Jun Zhang 黄鼎铭;张结印;王建桓;韦文奇;王子昊;王霆;张建军(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China [3]Songshan Lake Materials Laboratory,Dongguan 523808,China

出　　处：《Chinese Physics Letters》2021年第6期67-71,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant Nos.61975230,61635011,61804177 and 11804382);the National Key Research and Development Program of China(Grant No.2018YFB2200104);Beijing Municipal Science and Technology Commission(Grant No.Z191100004819010);the Key Research Program of Frontier Sciences,CAS(Grant No.QYZDB-SSW-JSC009)。

摘　　要：GaAs/Ge heterostructures have been employed in various semiconductor devices such as solar cells,high-performance CMOS transistors,andⅢ-Ⅴ/Ⅳheterogeneous optoelectronic devices.The performance of these devices is directly dependent on the material quality of the GaAs/Ge heterostructure,while the material quality of the epitaxial GaAs layer on the Ge is limited by issues such as the antiphase domain(APD),and stacking-fault pyramids(SFP).We investigate the epitaxial growth of high-quality GaAs on a Ge(001)mesa array,via molecular beam epitaxy.Following a systematic study of the Ge terrace via an in situ scanning tunneling microscope,an atomically step-free terrace on the Ge mesa measuring up to 5×5μm^(2) is obtained,under optimized growth conditions.The step-free terrace has a single-phase c(4×2)surface reconstruction.The deposition of a high-quality GaAs layer with no APD and SFP is then achieved on this step-free Ge terrace.High-resolution transmission electron microscopy and electron channel contrast image characterizations reveal the defect-free growth of the GaAs layer on the step-free Ge mesa.Furthermore,InAs quantum dots on this GaAs/Ge mesa reveal photoluminescent intensity comparable to that achieved on a GaAs substrate,which further confirms the high quality of the GaAs layer on Ge.

关 键 词：GAAS/GE OPTOELECTRONIC TUNNELING 

分 类 号：TB34[一般工业技术—材料科学与工程] TN303[电子电信—物理电子学]