Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization  

作　　者：Lili Han Chunhua Du Ziguang Ma Yang Jiang Kanglin Xiong Wenxin Wang Hong Chen Zhen Deng Haiqiang Jia 韩丽丽;杜春花;马紫光;江洋;熊康林;王文新;陈弘;邓震;贾海强(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;The Yangtze River Delta Physics Research Center,Liyang 213000,China;NANO-X,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [4]Songshan Lake Materials Laboratory,Dongguan 523808,China [5]The Yangtze River Delta Physics Research Center,Liyang 213000,China [6]NANO-X,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Chinese Physics Letters》2021年第6期72-75,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant Nos.62004218,61704008,61804176,and 61991441);Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.2021005);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB01000000);Jiangsu Science and Technology Plan(Grant No.BK20180255);supported by the Center for Clean Energy,Institute of Physics,Chinese Academy of Sciences。

摘　　要：The contact characteristic between p-InP and metal plays an important role in InP-related optoelectronic and microelectronic device applications.We investigate the low-resistance Au/Pt/Ni and Au/Ni ohmic contacts to p-InP based on the solid phase regrowth principle.The lowest specific contact resistivity of Au(100 nm)/Pt(115 nm)/Ni(50 nm)can reach 2.64×10^(-6)Ω·cm^(2) after annealing at 380℃ for 1 min,while the contact characteristics of Au/Ni deteriorated after annealing from 340℃ to 480℃ for 1 min.The results of scanning electron microscopy,atomic force microscopy and x-ray photoelectron spectroscopy show that the Pt layer is an important factor in improving the contact characteristics.The Pt layer prevents the diffusion of In and Au,inhibits the formation of Au3In metal compounds,and prevents the deterioration of the ohmic contact.The metal structures and optimized annealing process is expected to be helpful for obtaining high-performance InP-related devices.

关 键 词：resistance ANNEALING RESISTIVITY 

分 类 号：TG156.2[金属学及工艺—热处理]