30V条件下功率MOSFET器件应力波理论与试验研究  

Theoretical and Experimental Study on Stress Wave of Power MOSFET Under 30 Volts

作　　者：何赟泽 邹翔 李孟川 周雅楠 赵志斌 黄守道[1] 佘赛波 白芸 HE Yunze;ZOU Xiang;LI Mengchuan;ZHOU Yanan;ZHAO Zhibin;HUANG Shoudao;SHE Saibo;BAI Yun(College of Electrical and Information Engineering,Hunan University,Changsha 410012,Hunan Province,China;The State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China)

机构地区：[1]湖南大学电气与信息工程学院,湖南省长沙市410012 [2]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206

出　　处：《中国电机工程学报》2021年第16期5683-5692,共10页Proceedings of the CSEE

基　　金：国家自然科学基金面上项目(52077063);长沙市科技计划项目(kq2004006);新能源电力系统国家重点实验室(华北电力大学)(LAPS19013)。

摘　　要：功率金属–氧化物半导体场效应晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)在电磁热机等物理场相互作用下产生的应力波,对器件的可靠性设计和状态监测有重要意义。根据理论分析可知,功率MOSFET开通或关断可以产生瞬态电磁场,器件中的带电粒子在磁场中所受洛伦兹力,因此产生机械应力波。在30V低压条件下,采用脉冲测试电路并对功率MOSFET进行试验,应用声发射测量平台采集试验过程中功率MOSFET器件产生的瞬态电磁场和机械应力波。对不同电气参数下得到的声发射信号进行处理和分析,发现器件漏源电压导致高频电磁波的产生,而栅源电压和漏源电压共同影响低频机械应力波,为功率MOSFET器件产生声发射现象提供理论依据。The stress wave generated by power MOSFET under the interaction of physical fields such as electromagnetic,thermal and mechanical,is of great significance to the device reliability design and state monitoring.According to the theoretical analysis,when the power MOSFET is turned on or off,the electromagnetic field is excited.Mechanical stress waves are generated by charged particles in the magnetic field.Under 30 volts or lower voltage condition,pulse test circuit was used to test the discrete power MOSFETs,and acoustic emission measurement platform was also used to collect signals that composed by transient electromagnetic field and mechanical stress wave during the test.It is found that the drain-source voltage mainly leads to the generation of high-frequency electromagnetic wave,while the gate-source voltage and drain-source voltage affect the low frequency mechanical stress wave together.It provides a theoretical basis for the generation of acoustic emission from power MOSFET devices.

关 键 词：功率金属–氧化物半导体场效应晶体管 声发射 高频电磁波 机械应力波 可靠性 状态监测 

分 类 号：TM930[电气工程—电力电子与电力传动]