多模光纤耦合InGaAsP/InP单光子探测器模块  

Multimode Fiber-coupled InGaAsP/InP Single Photon Detector Module

作　　者：崔大健[1] 张承[1] 赵江林 敖天宏 李艳炯[1] 严银林 CUI Dajian;ZHANG Cheng;ZHAO Jianglin;AO Tianhong;LI Yanjiong;YAN Yinling(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2021年第3期327-331,共5页Semiconductor Optoelectronics

摘　　要：针对1064nm波段高灵敏激光测距应用,设计了一种由单光子雪崩光电二极管(SPAD)、微型热电制冷器(TEC)、主动淬灭主动恢复电路(AQAR)、温控单元、高压单元、FPGA等混合集成的高性能单光子探测器模块。SPAD芯片采用了分离吸收渐变电荷倍增(SAGCM)的InGaAsP/InP材料结构设计,内部电场分布经Matlab软件仿真,结果显示该结构具有良好的增益特性。SPAD芯片通过TEC制冷保持低温工作来降低暗计数以抑制器件的噪声。低延迟AQAR由高速比较器与宽带放大器构成,淬灭时间约为1.2ns,有效减少了后脉冲效应。测试结果表明,在-30℃,探测效率为30.2%下,暗计数率仅为1.9kHz,在死时间为0.8μs时,后脉冲为10.4%。通过集成化设计的单光子探测器模块具有探测效率高和暗计数率低的优势,能够满足小型化激光测距应用需求。Aiming at the application of highly sensitive laser ranging in the 950~1100 nm band,a high-performance single-photon photodetector module which is hybrid integrated with single-photon avalanche photodetector(SPAD),miniature thermoelectric cooler(TEC),active quenching and active recovery circuit(AQAR),temperature control unit,high-voltage unit and FPGA.The SPAD chip adopts the InGaAsP/InP material structure design that separates and absorbs the gradual charge multiplication.The internal electric field distribution is simulated by Matlab software,and the results show that the structure has good gain characteristics.The SPAD chip keeps working at low temperature through TEC refrigeration,reduces the dark count and improves the overall performance.The low-latency AQAR is composed of a high-speed comparator and a bandwidth amplifier.The quenching speed is about 1.2 ns,which can effectively reduce the post-pulse effect.The test results show,the detection efficiency is 30.2%when the temperature is-30℃and the dark count rate is 1.9 kHz.The post pulse is 10.4%when setting the dead-time as 0.8μs.The designed detector characterized by high detection efficiency and low dark count rate,can be applied in miniaturized laser ranging.

关 键 词：集成制冷 单光子雪崩光电二极管 激光测距 AQAR 

分 类 号：TN249[电子电信—物理电子学]