半导体碳纳米管的长度分选及其薄膜晶体管性能研究  

Research on Length Sorting of Semiconducting Carbon Nanotubes and the Performance of Thin Film Transistors

作　　者：姚建 邱松[2] 金赫华[2] 李清文 YAO Jian;QIU Song;JIN Hehua;LI Qingwen(Shanghai Advanced Research Institute of the Chinese Academy of Sciences,Shanghai 201203,CHN;Key Laboratory of Multifunctional and Smart Systems,Division of Advanced Materials,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,CHN;School of Physical Science and Technology,Shanghai Tech University,Shanghai 201210,CHN;University of Chinese Academy of Sciences,Beijing 100049,CHN)

机构地区：[1]中国科学院上海高等研究院,上海201203 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123 [3]上海科技大学,上海201210 [4]中国科学院大学,北京100049

出　　处：《半导体光电》2021年第3期348-352,共5页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2020YFA0714700,2016YFB0401104);国家自然科学基金项目(22075312,21773292);广东省重点领域研发计划(2019B010934001)。

摘　　要：半导体型碳纳米管薄膜的高质量制备及其优化对于碳纳米管基电子器件具有重要意义。其中半导体型碳纳米管的长度是影响薄膜质量的重要因素之一。文章通过聚[9-(1-辛酰基)-9H-咔唑-2,7-二基](PCz)成功制备了高纯度半导体型碳纳米管溶液,经过循环沉积工艺,高效地降低了分散液中的短碳管含量,有效地提升了半导体型碳纳米管的平均长度,在此基础上通过标准工艺成功制备了高性能碳纳米管薄膜晶体管。结果显示,优化后的长碳纳米管溶液制备的薄膜晶体管具有优异的电学性能,其开关比高达107,迁移率高达34cm^(2)·V^(-1)·s^(-1),比相应的短管性能提升了3倍。The high-quality preparation and optimization of semiconductor-based carbon nanotube films is of great significance for carbon nanotube-based electronic devices.The length of semiconducting carbon nanotubes is one of the important factors affecting the thin film.In this paper,high-purity semiconducting carbon nanotube solution was successfully prepared by poly[9-(1-octanoyl)-9 H-carbazole-2,7-diyl](PCz).Through a cyclic deposition process,the short carbon nanotubes were effectively removed,and the average length of semiconductor carbon nanotubes was improved.On this basis,high-performance carbon nanotube thin film transistors were successfully prepared through standard process.The results show that the thin film transistor prepared by the optimized long carbon nanotube solution presents excellent electrical properties,with an on-off ratio of up to 107 and a mobility of up to 34 cm^(2)·V^(-1)·s^(-1),which is3 times higher than that of short tubes.

关 键 词：半导体型碳纳米管 管长分选 薄膜 薄膜晶体管 

分 类 号：TN321.1[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]