WSe_(2)场效应晶体管的源漏接触特性研究  

Research on Source/Drain Contact Characteristics of WSe_(2) Field Effect Transistors

作　　者：张璐 张亚东 孙小婷 贾昆鹏 吴振华 殷华湘[1,2] ZHANG Lu;ZHANG Yadong;SUN Xiaoting;JIA Kunpeng;WU Zhenhua;YIN Huaxiang(Key Lab.of Microelectronics Devices and Integration Technol.,Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,CHN;University of Chinese Academy of Sciences,Beijing 100049,CHN;Tianjin Key Lab.of Electronic Materials and Devices,College of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300401,CHN)

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]中国科学院大学,北京100049 [3]河北工业大学电子信息工程学院电子材料与器件天津重点实验室,天津300401

出　　处：《半导体光电》2021年第3期371-374,384,共5页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2016YFA0202300);国家自然科学基金项目(61774168)。

摘　　要：二硒化钨(WSe_(2))具有双极导电特性,可以通过外界掺杂或改变源漏金属来调节载流子传输类型,是一类特殊的二维纳米材料,有望在未来集成电路中成为硅(Si)的替代材料。文章采用理论与实验相结合的方式系统分析了WSe_(2)场效应晶体管中的源漏接触特性对器件导电类型及载流子传输特性的影响,通过制备不同金属作为源漏接触电极的WSe_(2)场效应晶体管,发现金属/WSe_(2)接触的实际肖特基接触势垒高低极大地影响了晶体管的开态电流。源漏金属/WSe_(2)接触特性不仅取决于接触前理想的费米能级差,还受到界面特性,特别是费米能级钉扎效应的影响。Tungsten diselenide(WSe_(2))has ambipolar conductivity characteristics,which can be adjusted by external doping or changing source/drain metals.It is a special type of two dimensional nanomaterials and is expected to replace silicon(Si)in integrated circuits in the future.In this paper,the theory and experiments were combined to systematically analyze the influence of the source/drain contact characteristics of WSe_(2) field effect transistor on the conductivity type and carrier transport characteristics of the device.By preparing WSe_(2) field effect transistors with different metals as the source/drain contact electrodes,it is found that the actual Schottky contact barrier height of the metal/WSe_(2) contact greatly affects the on-state current of the transistor.The source/drain contact characteristics of the metal/WSe_(2) depend on the ideal Fermi level difference before contact,and also they will be affected by the interface characteristics,especially the Fermi level pinning effect.

关 键 词：二硒化钨 双极特性 金属功函数 肖特基势垒 源漏接触 费米能级钉扎 

分 类 号：TN386[电子电信—物理电子学]