基于不同纳米划痕顺序的6H-SiC单晶片材料去除机理研究  

Study on material removal mechanism of 6H-SiC single crystalwafer based on different nano-scratch order

作　　者：郜伟[1] 张银霞[1] 黄鹏举 GAO Wei;ZHANG Yinxia;HUANG Pengju(Henan Key Engineering Laboratory of Anti-Manufacturing Technology,School of Mechanical and Power Engineering,Zhengzhou University,Zhengzhou 450001,China)

机构地区：[1]郑州大学机械与动力工程学院,抗疲劳制造技术河南省工程实验室,郑州450001

出　　处：《金刚石与磨料磨具工程》2021年第4期92-97,共6页Diamond & Abrasives Engineering

基　　金：国家自然科学基金(U1804254);河南省自然科学基金(162300410244);中国博士后科学基金(2015M580635)。

摘　　要：通过微纳米力学测试系统对6H-SiC单晶片(0001)晶面进行不同间距和不同顺序的纳米刻划试验,并用摩擦力传感器、超景深显微系统和三维形貌仪对产生的划痕的划痕横截面轮廓曲线、划痕深度、摩擦力以及表面形貌进行分析,研究单晶片刻划过程中不同划痕间距和划痕顺序下的材料去除过程。结果表明:当静载荷为100 mN时,不同划痕间距影响单晶片表面的横截面轮廓和平均摩擦力。随着划痕间距增大,2条划痕之间的深度差逐渐减小,划痕2的平均摩擦力逐渐减小并接近划痕1的;当划痕间距为14μm时,最大划痕深度为-183.4 nm,平均摩擦力为18.8 mN。划痕顺序对表面形态和材料去除影响显著,当静载荷为90 mN,划痕间距为6μm和8μm时,非顺序划痕的表面材料堆积较少,表面粗糙度值更低,表面质量较好。当划痕间距为6μm时,0~180 mN的动载荷均匀加载下顺序划痕末端表面的材料破碎情况严重,而非顺序划痕则在一定程度上能减少晶片划痕的裂纹程度;顺序划痕中的最大摩擦力为76.8 mN,大于非顺序划痕中的最大摩擦力63.3 mN,非顺序划痕更有助于实现SiC晶片的塑性加工,提高其表面加工质量。The(0001)surface of 6H-SiC single crystal were scratched with different intervals and different orders by micro-nano mechanical test system.The cross section profile curve of the scratch,the scratch depth,the friction force and the surface morphology on the wafer surface were analyzed by friction sensor,super depth-of-field microscope system and 3D topography instrument.The material removal process under different intervals and different orders in the process of single crystal wafer scratching were studied.The results show that when the static load is 100 mN,the cross section profile and the average friction force of the single crystal surface are affected by different scratch intervals.With the increase of scratch interval,the depth difference between two scratches decreases gradually,and the average friction of scratch 2 gradually decreases and approches that of scratch 1.When the scratch interval is 14μm,the maximum scratch depth is-183.4 nm and the average friction force is 18.8 mN.The scratch order has a significant effect on the surface morphology and the material removal.When the static load is 90 mN,the scratch interval is 6μm and 8μm,the surface material accumulation of non-sequential scratche is less,the wafer surface roughness value is lower,and its surface quality is better.When the scratch interval is 6μm,the material on the end surface of sequential-scratches is seriously broken under uniform dynamic load of 0~180 mN,while non-sequential scratches can reduce the crack degree of wafer scratches to a certain extent.The maximum friction force in sequential-scratches is 76.8 mN,which is greater than 63.3 mN in non-sequential scratches.Non-sequential scratches are more helpful to realize the plastic processing of SiC wafer and improve its surface processing quality.

关 键 词：SiC单晶片 纳米划痕 划痕顺序 划痕间距 材料去除 

分 类 号：TG58[金属学及工艺—金属切削加工及机床] TN305.1[电子电信—物理电子学]