基于隧穿氧化物钝化接触的高效晶体硅太阳电池的研究现状与展望  

Status and prospective of high-efficiency c-Si solar cells based on tunneling oxide passivation contacts

作　　者：任程超 周佳凯 张博宇 刘璋 赵颖[1,2,3,4] 张晓丹[1,2,3,4] 侯国付 Ren Cheng-Chao;Zhou Jia-Kai;Zhang Bo-Yu;Liu Zhang;Zhao Ying;Zhang Xiao-Dan;Hou Guo-Fu(Institute of Photoelectronic Thin Film Devices and Technology of Nankai University,Tianjin 300350,China;Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin,Tianjin 300350,China;Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education,Tianjin 300350,China;Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin,Tianjin 300350,China)

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300350 [2]天津市光电子薄膜器件与技术重点实验室,天津300350 [3]薄膜光电子技术教育部工程研究中心,天津300350 [4]天津市中欧太阳能光伏发电技术联合研究中心,天津300350

出　　处：《物理学报》2021年第17期288-298,共11页Acta Physica Sinica

基　　金：国家重点研发计划(批准号:2018YFB1500402);国家自然科学基金(批准号:62074084)资助的课题.

摘　　要：在当今的光伏市场,晶体硅电池占据超过九成的份额,并且被认为在未来将依旧占据主导地位.在高效晶硅电池中,隧穿氧化物钝化接触太阳电池(tunnel oxide passivated contact solar cell,TOPCon)因其优异的表面钝化效果以及与传统产线兼容性好的优势而受到持续关注.该电池最显著的特征是其高质量的超薄氧化硅和重掺杂多晶硅的叠层结构,对全背表面实现了高效钝化,同时载流子选择性地被收集,具有制备工艺简单、使用N型硅片无光致衰减问题和与传统高温烧结技术相兼容等优点.本文首先介绍了隧穿氧化物钝化接触太阳电池的基本结构和基本原理,然后对现有超薄氧化硅层和重掺杂多晶硅层的制备方式进行了对比,最后在分析研究现状基础上指出了该电池未来的研究方向.Current photovoltaic market is dominated by crystalline silicon(c-Si)solar modules and this status will last for next decades.Among all high-efficiency c-Si solar cells,the tunnel oxide passivated contact(TOPCon)solar cell has attracted much attention due to its excellent passivation and compatibility with the traditional c-Si solar cells.The so-called tunnel oxide passivated contact(TOPCon)consists of an ultra-thin silicon oxide layer less than 2 nm in thickness and a heavily doped poly-Si layer,which is used for implementing effective passivation and selective collection of carriers.This TOPCon solar cell has some advantages including no laser contact opening,no light-induced degradation and no elevated temperature-induced degradation because of N-type c-Si wafer,compatibility with high temperature sintering and technical scalability.This paper first introduces the basic structure and principles of TOPCon solar cells,then compares the existing methods of preparing ultra-thin silicon oxide layer and heavily doped poly-Si layer,and finally points out the future research direction of this cell based on the analysis of the current research status.

关 键 词：隧穿氧化物钝化接触 超薄氧化硅 重掺杂多晶硅层 太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]