(112)B碲锌镉衬底表面Everson腐蚀坑与材料缺陷的关系  

Correlation between Everson etch pits and material defects of(112)B CdZnTe substrates

作　　者：周昌鹤 杨建荣[2] 周梅华[2] 徐超[2] ZHOU Chang-He;YANG Jian-Rong;ZHOU Mei-Hua;XU Chao(University of Chinese Academy of Sciences,Beijing 100049,China;Key Laboratory of Infrared Imaging Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《红外与毫米波学报》2021年第4期432-438,共7页Journal of Infrared and Millimeter Waves

基　　金：中国科学院上海技术物理研究所创新专项(CX-299)。

摘　　要：通过研究碲锌镉衬底(112)B面缺陷腐蚀坑和(111)B面缺陷腐蚀坑之间的关系,揭示了(112)B面腐蚀坑与材料缺陷之间的关系。结果显示,Everson腐蚀剂在碲锌镉材料(112)B面上揭示的棒状腐蚀坑起源于材料中的体缺陷,或由延伸缺陷腐蚀坑在缺陷终止后演变而成,三种典型形状的锥形腐蚀坑分别来自延伸方向为<110>、<112>和<123>的延伸缺陷。研究结果同时显示,Everson腐蚀剂对部分取向的延伸缺陷所形成的腐蚀习性面在(112)B表面不能构成锥形腐蚀坑,通过观察(112)B面锥形坑随腐蚀深度发生横向移动的方向,进一步证实Everson腐蚀剂只能揭示延伸方向位于(112)极图上[011]和[101]连线附近区域的延伸缺陷。基于上述实验结果,文章进一步讨论了(112)B面Everson腐蚀坑密度与材料缺陷密度的关系,其结果将有助于碲镉汞分子束外延识别源自衬底的材料缺陷,并对碲锌镉(112)B衬底的质量进行更好的控制。By studying the relationship between Everson etch pits on CdZnTe(112)B surface and(111)B surface,the correspondence of Everson etch pits on the(112)B surface and the defects in CdZnTe materials were revealed.The re‐sults show that the rod-shaped etch pits on the(112)B surface originate from the bulk defects in the material,or develop from the residual pyramidal etch pits after the extending defects terminate.Three kinds of different pyramidal etch pits on the(112)B surface come from the extending defects with the extending directions in<110>,<211>and<123>,re‐spectively.Results also show that the habit etching faces of some pyramidal etch pits on(111)B surface can no longer form pyramidal etch pits on(112)surface.By observing the lateral shift of etch pits during prolonged etching,it was confirmed that Everson etchant could only reveal the extending defects with the crystal orientations situated near the con‐nection line of[011]and[101]on the(112)pole figure.Based on the experimental results,the relationship between etch pit density on CdZnTe(112)B surface and the defect density of CdZnTe materials was discussed.The results will be helpful for HgCdTe molecular beam epitaxy to identify the defects in HgCdTe epilayers originating from CdZnTe sub‐strates and better control the quality of CdZnTe(112)B substrates.

关 键 词：碲锌镉 腐蚀坑 体缺陷 延伸缺陷 

分 类 号：O77[理学—晶体学]