Improvement of Environment Stability of an i-Line Chemically Amplified Photoresist  

作　　者：Haibo Li Qian Yang Jia Sun Jie Li Meng Guo Bing Li 

机构地区：[1]Kempur Microelectronics,Inc

出　　处：《Journal of Microelectronic Manufacturing》2021年第2期1-7,共7页微电子制造学报（英文）

摘　　要：An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.

关 键 词：Chemical amplification thick film i-Line environment stability Poly(p-hydroxyl styrene) PAB PEB 

分 类 号：O17[理学—数学]